RF SOE power transistors are traditionally wire bonded using gold wedge bonders to create strings of loops with each loop in the chain having specific length and height requirements. A ball bond technology (chain bonding) to create a ball‐loop‐stitch‐loop‐stitch‐loop‐stitch is demonstrated as a more cost effective alternative to these traditional wedge bond solutions.
Initial chain bonding using a ball bonder produced comparable performance as a wedge bonded solution, but used more prevalent ball bonding technology to reduce interconnect cost of ownership.
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