AuSi and AuSn Eutectic Die Attach Case Studies
Posted by Jessica Sylvester on Sat, Mar 12, 2011
High power transistor, laser and LED devices require packaging to remove thermal energy from the die. Although some silver filled epoxies provide thermal conductivity approaching 60 W/mK, AuSi and AuSn solder have long proven superior thermal performance.
AuSn Die Bond
AuSi Eutectic Die Attach
The challenge for designers is to make products more efficient, but as devices become smaller the challenge continues to be maintaining die junction temperatures as power density increases. RF Power amplifiers approach 1,000 W/cm2 while IGBT devices are approximately 100 W/cm2. The die sizes vary from product to product as well as the required packages to transfer and dissipate the die heat.
Download the technical whitepaper below to learn more about three specific cases covering a range of real-world applications.
Case 1: AuSi (RFSOE) 16x63x4 and 31x64x4mil
Case 2: AuSn (P-Side Down) 12x10x12mil with preform using pulsed heat top down
Case 3: AuSn (ASIC) 453x274x12mil with preform using pulsed heat bottom up
Materials such as Si and GaAs on CuW and GaN on SiC in these three case studies for die sizes ranging from 12 x 21 x 4 mil thick to 453 x 274 x 12 mil thick, using AuSi or AuSn eutectic die attach processes. The cases provide an overview of material selection and methods for optimized utilization of eutectic solders. Bond quality metrics such as fillet, voiding and shear are also discussed in this technical paper. Gain a deeper understanding of eutectic die attach processes to help design and process engineers select equipment and processes for die and substrates that require high thermal dissipation and/or fluxless processes.
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Daniel Evans
Senior Scientist / Applications Manager
Palomar Technologies
